Who: The Norwegian University of Science and Technology (NTNU) and IBM.
What: Researchers demonstrated that nanowires of gallium arsenide and other semiconductors can be tuned with a small strain to function efficiently as a single light-emitting diode or a photodetector, by controlling a change in the crystal structure during nanowire growth. See “Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress”
Where: Potential applications are in solar cells and light-emitting diodes (LEDs).
When: Applications are unlikely within the next 3-5 years for this application area but shows exceptional promise in the medium-term. The researchers have established CrayoNano AS, a company that has a patented invention that grows semiconductor nanowires on graphene.
